In N-channel MOSFETs, only electrons flow during forward conduction there are no minority carriers. Power MOSFET Structure Source Metal P- Body Gate Metal Gate Poly N+ N+ R channel B J-FET P- Body Parasitic BJT N- Drain R drift Body Diode Source Metal drain-source voltage is supported by the reverse biased body-drain p-n junction. Advanced Power Technology MOSFET datasheet information is also explained. This application note explains these and other main features of high voltage N-channel power MOSFETs, and provides useful information for device selection and application.
The main drawback is on-resistance R DS(on) and its strong positive temperature coefficient. In these respects, power MOSFETs approach the characteristics of an ideal switch. Columbia Street Bend, OR Introduction Power MOSFETs are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. Applications Engineering Manager Advanced Power Technology 405 S.W. 1 Power MOSFET Tutorial Jonathan Dodge, P.E.
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